EPIC members in the News

Double Patterning and Double Exposure: Nikon, CEA-Leti to Partner

Nikon Corporation announced a Joint Development Program with CEA-Leti, the European microelectronics research center focused on optical lithography development for post 45-nm technology.


Nikon Corporation announced a Joint Development Program with CEA-Leti, the European microelectronics research center focused on optical lithography development for post 45-nm technology. The work will examine the potential of Double Exposure and Double Patterning technology for 32-nm semiconductor devices, and will utilize a Nikon scanner located in CEA-Leti's Nanotec 300 research facility. Double patterning was added to the ITRS roadmap in 2006 as a potential solution for 32-nm lithography. EUVL and high-index immersion are also listed as potential solutions on the ITRS roadmap, but the development timeline for those technologies may limit them from being used for 32-nm applications. Nikon is working with key research centers and major IC manufacturers, and partnering with design, mask, and resist companies to ensure a manufacturable solution is available in time for the 32-nm process.



« Back to news list
...